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ISTS100 ISTS200
1mm APERTURE OPTO-ELECTRONIC SINGLE CHANNEL SLOTTED INTERRUPTER SWITCHES WITH TRANSISTOR SENSORS
1
25.7 24.1 19.05 E
4 6.6 3
3.3 DIA 2 PLCS 3.3 3.0 2.8 9.0 8.0
Dimensions in mm 1 2 4 3 3.0 11.1 10.5 0.45 0.40 7.62 2.54 4 OPTICAL CENTRE LINE
E
6.6 3.3 3.0 2.8
2
12.7
3.0 11.1 10.5
12.7
9.0 8.0
0.45 0.40 7.62 2.54 1
3.3 3.0 OPTICAL CENTRE LINE
ISTS200
2
3
ISTS100
DESCRIPTION The ISTS100, ISTS200 opaque photointerrupters are single channel switches consisting of a Gallium Arsenide infrared emitting diode and a NPN silicon photo transistor mounted in a polycarbonate housing. The package is designed to optimise the mechanical resolution, coupling efficiency, ambient light rejection, cost and reliability. Operating on the principle that objects opaque to infrared will interrupt the transmission of light between an infrared emitting diode and a photo sensor switching the output from an "ON" state to an "OFF" state. FEATURES l High Gain l 3mm Gap between LED and Detector l Polycarbonate case protected against ambient light APPLICATIONS l Copiers, Printers, Facsimilies, Record Players, Casette Decks, Optoelectronic Switches
ABSOLUTE MAXIMUM RATINGS (25C unless otherwise specified) Storage Temperature -40C to + 85C Operating Temperature -25C to + 85C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260C INPUT DIODE Forward Current Reverse Voltage Power Dissipation OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Emitter-collector Voltage BVECO Collector Current IC Power Dissipation 30V 5V 20mA 75mW 50mA 5V 75mW
ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581
24/9/97
ISOCOM INC 720 E., Park Boulevard, Suite 104, Plano, TX 75074 USA Tel: (972) 423-5521 Fax: (972) 422-4549
DB92182-AAS/A2
ELECTRICAL CHARACTERISTICS ( TA = 25C Unless otherwise noted ) PARAMETER Input Forward Voltage (VF) Reverse Voltage (VR) Reverse Current (IR) Collector-emitter Breakdown (BVCEO) ( Note 1 ) Emitter-collector Breakdown (BVECO) Collector-emitter Dark Current (ICEO) MIN TYP MAX UNITS 1.2 5 100 30 5 100 1.7 V V A V V nA TEST CONDITION IF = 50mA IR = 100A VR = 5V IC = 1mA IE = 100A VCE = 10V
Output
Coupled
On-State Collector Current IC ( ON ) ( Note 1 )
1.9
mA
30mA IF , 5V VCE
Collector-emitter Saturation VoltageVCE(SAT) Turn-on Time Turn-off Time Note 1 ton toff 8 50
0.4
V s s
30mA IF , 1.8mA IC VCC = 5V , IF = 30mA,RL= 2.5k
Special Selections are available on request. Please consult the factory.
24/9/97
DB92182-AAS/A2
Collector Power Dissipation vs. Ambient Temperature 100 Collector power dissipation PC (mW) Normalized output current 10 4 2 1 0.4 0.2 0.1 0.04 0.02 0.01 0.1
Normalized Output Current vs. Collector-emitter Voltage
IF = 50mA 30mA 20mA 10mA 5mA Normalized to IF = 30mA VCE = 5V Pulsed PW = 100s PRR = 100pps 10 100
75
50
25
TA = 25C 1
0 -25 0 25 50 75 100 125 Ambient temperature TA ( C ) Forward Current vs. Ambient Temperature 60 Normalized output current 50 Forward current IF (mA) 40 30 20 10 0 -25 0 25 50 75 100 125 Ambient temperature TA ( C ) Collector-emitter saturation voltage VCE(SAT) (V) Normalized Output Current vs. Ambient Temperature 1.5 Normalized output current
Collector-emitter voltage VCE ( V ) Normalized Output Current vs. Forward Current Normalized to IF = 30mA VCE = 0.4V Pulsed PW = 100s PRR = 100pps T A = 25C
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1
2
5
10
20
50
Forward current IF (mA) Collector-emitter Saturation Voltage vs. Ambient Temperature 0.28 0.24 0.20 0.16 0.12 0.08 0.04 0 -25 0 25 50 75 100 Ambient temperature TA ( C )
DB92182-AAS/A2
IF = 30mA VCE = 5V
IF = 30mA IC = 1.8mA
1.0
0.5
0 -25 0 25 50 75 100 Ambient temperature TA ( C )
24/9/97

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